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| SP8K22 Transistor Switching (45V, 4.5A) SP8K22 Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). External dimensions (Unit : mm) SOP8 5.00.2 (5) (8) 6.00.3 3.90.15 Applications Power switching , DC / DC converter , Inverter Max.1.75 Structure Silicon N-channel MOS FET 1.50.1 0.15 1.27 0.40.1 0.1 Each lead has same dimensions Packaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 Absolute maximum ratings (Ta=25C) It is the same ratings for the Tr. 1 and Tr. 2. Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Chanel temperature Range of Storage temperature *1 PW10Duty cycle1% *2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits Unit 45 V 20 V 4.5 A *1 18 A 1 A *1 18 A *2 2 W/TOTAL *2 1.4 W/ELEMENT o 150 C o -55 to +150 C Equivalent circuit (8) (7) (6) (5) 0.50.1 (1) (4) 0.20.1 (8) (7) (6) (5) 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain 1 1 (1) (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. 1/4 SP8K22 Transistor Electrical characteristics (Ta=25C) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge * pulsed Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) * |Yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd * Min. 45 1.0 3.5 Typ. 33 41 46 550 140 70 12 18 42 12 6.8 2.0 2.9 Max. 10 1 2.5 46 57 64 9.6 Unit A V A V m S pF Condition VGS=20V/VDS=0V ID=1mA/VGS=0V VDS=45V/VGS=0V VDS=10V/ID=1mA ID=4.5A/VGS=10V ID=4.5A/VGS=4.5V ID=4.5A/VGS=4.0V VDS=10V/ID=4.5A VDS=10V VGS=0V f=1MHz VDD=25V ID=2.5A VGS=10V RL=10/RG=10 VDD=25V/ID=4.5A VGS=5V RL=5.6/RG=10 * * * * * * * ns nC Body diode characteristics (Source-Drain) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Forward voltage * pulsed Symbol VSD * Min. Typ. Max. 1.2 Unit V Condition IS=4.5A/VGS=0V 2/4 SP8K22 Transistor Electrical characteristic curves 10 VDS=10V pulsed Drain Currnt : ID [A] 1000 Ta=125 C o o o o 1000 75 C 25 C -25 C Static Drain-Source On-State ResistanceRDS(on) [m] 1 Ta=125 C 75 C 25 C o o o o 100 Static Drain-Source On-State ResistanceRDS(on) [m] VGS=10V pulsed VGS=4.5V pulsed 100 0.1 -25 C 10 10 Ta=125oC 75oC 25oC -25oC 0.01 1.0 1.5 2.0 2.5 3.0 3.5 1 0.01 1 0.1 1 10 0.01 0.1 1 10 Gate-Source Voltage : VGS [V] Drain Current : ID [A] Drain Current : ID [A] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 1000 VGS=4V pulsed 200 Ta=25oC pulsed Static Drain-Source On-State ResistanceRDS(on) [m] 10 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [m] 150 Source Current : Is [A] 100 1 Ta=125oC 75oC 25oC -25oC 100 10 Ta=125 C 75oC 25 C -25oC o o ID=4.5A 7 0.1 50 ID=2.25A 0 1 0.01 0.01 0 5 10 15 0.1 1 10 0 0.5 1 1.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 Fig.6 Source-Current vs. Source-Drain Voltage 10000 Ta=25oC f=1MHz VGS=0V Switching Time : t [ns] 1000 Capacitance : C [pF] 1000 tf Ciss RG=10 Pulsed Gate-Source Voltage : VGS [V] Ta=25oC VDD=25V VGS=10V 10 Ta=25oC VDD=25V ID=4.5A RG=10 Pulsed 8 6 4 100 td(off) td(on) Coss 100 10 tr 2 Crss 10 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 1 0.01 0.1 1 10 Drain Current : ID [A] 0 0 2 4 6 8 10 12 Total Gate Charge : Qg [nC] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 SP8K22 Transistor Measurement circuits Pulse Width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG (Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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